M08900 - SEMI M89 - Test Method for Recombination Lifetime of the Epilayer of the Silicon Epitaxial Wafer (p/p+, n/n+) by the Short Wavelength Excitation Microwave Photoconductive Decay Method Revision:SEMI M89-0721 - Current 多結晶シリコンPolycrystalline silicon（SEMI M16 あるいは JEITA

多結晶シリコンPolycrystalline silicon（SEMI M16 あるいは JEITA EM-3601A参照）

This Specification defines the dimensions of container (refer to ¶ 5

The purpose of this Specification is to define a standard description of data

while acknowledging practical limitations that may exist in individual circumstances

M08900 - SEMI M89 - Test Method for Recombination Lifetime of the Epilayer of the Silicon Epitaxial Wafer (p/p+, n/n+) by the Short Wavelength Excitation Microwave Photoconductive Decay Method Revision:SEMI M89-0721 - Current 多結晶シリコンPolycrystalline silicon（SEMI M16 あるいは JEITAIn recent years, ULSI and other devices have been increasingly miniaturized and integrated. As a result, high tech devices use more and more epitaxial wafers (p p+, n n+) which have substrates with lower resistivity, because epitaxial wafers are advantageous over other types of silicon wafers in several respects. For example, their features include integrity of active region of device, gettering capacity, resistance for latch up, etc. On the other