MF136600 - SEMI MF1366 - Test Method for Measuring Oxygen Concentration in Heavily Doped Silicon Substrates by Secondary Ion Mass Spectrometry StdTpc-Chemical & Gas Testing health and safety (EH&S) issues

health and safety (EH&S) issues associated with their use

This Document can be used as a Guide for equipment manufacturers during the design and testing of their equipment and by those who either use or produce reticles and other EES items

1-0813 (technical revision)

This Test Method is especially applicable for silicon where boron is an unintentional p-type contaminant at trace levels (<5 × 1014 atoms/cm3)

MF136600 - SEMI MF1366 - Test Method for Measuring Oxygen Concentration in Heavily Doped Silicon Substrates by Secondary Ion Mass Spectrometry StdTpc-Chemical & Gas Testing health and safety (EH&S) issuesThis Test Method covers the determination of total oxygen concentration in the bulk of single crystal silicon substrates using SIMS. This Test Method can be used for silicon in which the dopant concentrations are less than 0. 2% (1 atoms cm3 1020 atoms cm3) for boron, antimony, arsenic, and phosphorus (refer to SEMI MF723). This Test Method is especially applicable for silicon that has resistivity between 0. 0012 cm and 1 cm for p type silicon and