M09000 - SEMI M90 - Test Method for Bulk Micro Defect Density and Denuded Zone Width in Annealed Silicon Wafers by Optical Microscopy After Preferential Etching Revision:SEMI M90-0821 - Current SEMI E51-0298 (technical revision)

SEMI E51-0298 (technical revision)

and surface properties of SI GaAs that are considered technically relevant according to the present status of scientific knowledge and material technology

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M09000 - SEMI M90 - Test Method for Bulk Micro Defect Density and Denuded Zone Width in Annealed Silicon Wafers by Optical Microscopy After Preferential Etching Revision:SEMI M90-0821 - Current SEMI E51-0298 (technical revision)This Standard defines the measurement method for bulk micro defect (BMD) densities and denuded zone (DZ) width in annealed silicon wafers. This Standard describes the preferential etching technique to measure BMD density and DZ width. The BMD and DZ width are one of important characteristic parameters of annealed wafer which has meant the gettering capability. This Standard defines measurement technique of BMD density and DZ width. BMD and DZ form in