M03600 - SEMI M36 - Test Method for Measuring Etch Pit Density (EPD) in Low Dislocation Density Gallium Arsenide Wafers Revision:SEMI M36-0699 - Inactive この仕様は，生産用ウェーハ仕様としては意図していない。

この仕様は，生産用ウェーハ仕様としては意図していない。

SEMI E48-1101 (technical revision)

SEMI E30-0717 (technical revision)

509 certificate  for identifying buyers in supply chain track and trace system

M03600 - SEMI M36 - Test Method for Measuring Etch Pit Density (EPD) in Low Dislocation Density Gallium Arsenide Wafers Revision:SEMI M36-0699 - Inactive この仕様は，生産用ウェーハ仕様としては意図していない。This test method was technically approved by the global Compound Semiconductor Committee and is the direct responsibility of the Japanese Compound Semiconductor Materials Committee. Current edition approved by the Japanese Regional Standards Committee on March 17, 1999. Initially available at www. semi. org April 1999; to be published June 1999. This document provides a method to measure etch pit density (EPD) in low dislocation density GaAs wafers.