M03700 - SEMI M37 - Test Method for Measuring Etch Pit Density (EPD) in Low Dislocation Density Indium Phosphide Wafers StdPbc-1214 This edition was approved for
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Description
This edition was approved for publication by the global Audits and Reviews Subcommittee on October 17
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The purpose is to:
and judgment rules for ultra-thin glass for photovoltaic modules
M03700 - SEMI M37 - Test Method for Measuring Etch Pit Density (EPD) in Low Dislocation Density Indium Phosphide Wafers StdPbc-1214 This edition was approved forThis test method was technically approved by the global Compound Semiconductor Committee and is the direct responsibility of the Japanese Compound Semiconductor Materials Committee. Current edition approved by the Japanese Regional Standards Committee on March 17, 1999. Initially available at www. semi. org April 1999; to be published June 1999. This document provides a method to measure etch pit density (EPD) in low dislocation density InP wafers.
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