HB01100 - SEMI HB11 - Specification for Sapphire Single Crystal Ingot Intended for Use for Manufacturing HB-LED Wafers Revision:SEMI HB11-0819 - Superseded orgで入手可能となる。初版は2000年6月発行。前版は2007年3月発行。

orgで入手可能となる。初版は2000年6月発行。前版は2007年3月発行。

This Guide is intended for use in both establishing new Specifications within SEMI as well as verification of performance to SEMI Specifications

Most device applications require that mobile ionic charge be minimized

It provides an evaluation guide and reference sources appropriate to facilities and equipment where toxic and flammable gases are used and stored in gaseous or liquid form

HB01100 - SEMI HB11 - Specification for Sapphire Single Crystal Ingot Intended for Use for Manufacturing HB-LED Wafers Revision:SEMI HB11-0819 - Superseded orgで入手可能となる。初版は2000年6月発行。前版は2007年3月発行。The sapphire single crystal ingot is used as a substrate material for HB LED applications. To permit common processing equipment to be used in multiple device fabrication lines, it is essential for the sapphire single crystal ingot specifications to be standardized. This Specification provides the characteristics of sapphire single crystal ingot, consisting of the physical specification, orientation, shape, and defect standard. This Specification is