GaAs Wafer, Growing Method: VGF, (100) undoped Semi-Insulated 2"D x0.5 mm, 1SP Pellet Presses and the latest version testing

and the latest version testing software are installed and calibrated for immediate use (Up to 20 sets of analyzers can be simultaneously controlled by one PC)

ID:      82 mm

All pressing dies are made of high-stretched carbon steel to achieve high hardness to meet the essential requirements of making ceramic or metal samples

Orientation:                      (100)+/-0

GaAs Wafer, Growing Method: VGF, (100) undoped Semi-Insulated 2"D x0.5 mm, 1SP Pellet Presses and the latest version testingGaAs single crystal wafer Growing Method: VGF Orientation: (100)+ 0. 5 degree Size: 2" dia x 0. 5mm Polishing: single side polished Doping: un doped Conductor type: Semi insulating Ra(Average Roughness) : < 0. 4 nm Mobility: 4470 6540 cm^2 V. S Resistivity: (0. 96 5. 34) x 10^8 ohm. cm EPD: <5000cm^2 EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces