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Ge Substrate (111) 5 x 5 x 0.5 mm, 1 SP, P-type ,Ga-doped ,R: 0.005-0.01 ohm.cm Al2O3 Sample Plate 125" Thick
Ge Substrate (111) 5 x 5 x 0.5 mm, 1 SP, P-type ,Ga-doped ,R: 0.005-0.01 ohm.cm Al2O3 Sample Plate 125" Thick
$28.75
Description
125" Thick
Conductor type: P-type
Reflectivity of SPPC
Thickness: 0
Ge Substrate (111) 5 x 5 x 0.5 mm, 1 SP, P-type ,Ga-doped ,R: 0.005-0.01 ohm.cm Al2O3 Sample Plate 125" ThickSpecifications Growing Method: CZ Wafer Size: 5x5x0. 5 mm Surface Polishing: one side epi polished Orientation: (111) Surface roughness: < 8 A ( by AFM) Doping: Ga doped Conductor type: P type Resistivity: 0. 005 0. 01 Ohms cm EPD: N A Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater
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 5 x 5 x 0.5 mm, 1 SP, P-type ,Ga-doped ,R: 0.005-0.01 ohm.cm Al2O3 Sample Plate 125){kind=link}
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