Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 100mm dia x 0.5 mm t, P type, 1SP R:0.01-0.05 ohm.cm Boron-Nitride on Silicon Standard materials include 316 stainless

Standard materials include 316 stainless steel bodies and glands

for heating up the two zone CSS furnace with max

Grain Size 14 microns

Active Material Proportion in Powder: 95% (PVDF and Super P is 2% and 3%

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 100mm dia x 0.5 mm t, P type, 1SP R:0.01-0.05 ohm.cm Boron-Nitride on Silicon Standard materials include 316 stainlessThermal oxide Research Grade , about 80 % useful area SiO2 layer on 100mm Silicon wafer Oxide layer thickness: 300 nm ( 3000A) + 10% Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: P type B doped Resistivity: 0. 01 0. 05 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 100mm dia + 0. 5 mm x 0. 5 mm th Orientation: (100) + 0. 5o Polish: one