GaAs, VGF Grown (110) orientation, SI, undoped, 2" dia x 0.5mm, 2sp - GAUe50D05C2-US Diamond on Silicon wafer Perfect for ferroelectric epitaxial thim

Perfect for ferroelectric epitaxial thim film

MSK-PN110-S is a compact crimper driven by compressed inert gas or air for various types of coin cells such as CR2016

especially for sodium-ion batteries

Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container

GaAs, VGF Grown (110) orientation, SI, undoped, 2" dia x 0.5mm, 2sp - GAUe50D05C2-US Diamond on Silicon wafer Perfect for ferroelectric epitaxial thimGaAs single crystal wafer Growing Method: VGF Orientation: (110) Size: 2" dia x 0. 5mm Polishing: two sides polished Doping: undoped, Conductor type: SI (Semi insulating ) Carrier Concentration: N A Mobility: 3710 6230 cm^2 V. S EPD: N A Resistivity: (0. 8 4. 8)E8 ohm. cm Ra(Average Roughness) : < 0. 4 nm EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces