, Flat-(1-10), N-type, Sb-doped, 10x10x0.5mm, 1sp, R:0.005-0.01 ohm.cm Ge With 13mm (L) x 11mm){kind=link}
THEA Size:52/14/140
US$ 85.00
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Ge (111), Flat-(1-10), N-type, Sb-doped, 10x10x0.5mm, 1sp, R:0.005-0.01 ohm.cm Ge With 13mm (L) x 11mm
Ge (111), Flat-(1-10), N-type, Sb-doped, 10x10x0.5mm, 1sp, R:0.005-0.01 ohm.cm Ge With 13mm (L) x 11mm
$52.84
Description
With 13mm (L) x 11mm (W) protrude current collector
Wafer Size: 4" dia x 500 microns
Remained solvent
A 500g pack of 3
Ge (111), Flat-(1-10), N-type, Sb-doped, 10x10x0.5mm, 1sp, R:0.005-0.01 ohm.cm Ge With 13mm (L) x 11mmSpecifications Growing Method: CZ Wafer Size: 10x10x0. 5 mm Surface Polishing: One side epi polished Orientation: (111) Surface roughness: < 8 A ( by AFM) Doping: Sb doped Conductor type: N type Resistivity: 0. 005 0. 01 Ohms cm EPD: N A Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater
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