Growth Method CZ (LEC) Density 4. 13 g cm3 Melt Point 1480 oC Thermal Expansion 5. 3 x10 6 oC Dopant S doped undoped Crystal growth axis <111> or"> Growth Method CZ (LEC) Density 4. 13 g cm3 Melt Point 1480 oC Thermal Expansion 5. 3 x10 6 oC Dopant S doped undoped Crystal growth axis <111> or"> Growth Method CZ (LEC) Density 4. 13 g cm3 Melt Point 1480 oC Thermal Expansion 5. 3 x10 6 oC Dopant S doped undoped Crystal growth axis <111> or"> GaP wafer, S doped, (111) orientation, 2" dia x 0.5mm, 1sp - GPSc50D05C1 CdTe & CdZnTe/CZT 005 wt% Growth Method – salirdelamultipropiedad.es

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GaP wafer, S doped, (111) orientation, 2" dia x 0.5mm, 1sp - GPSc50D05C1 CdTe & CdZnTe/CZT 005 wt% Growth Method

$332.93

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Description

005 wt%  Growth Method

Roll Core Dimension

Purity :                          >99

Polishing:  Two sides polished

GaP wafer, S doped, (111) orientation, 2" dia x 0.5mm, 1sp - GPSc50D05C1 CdTe & CdZnTe/CZT 005 wt% Growth MethodGaP single crystal wafer, Size: 2" diameter(+ _0. 15mm) x 0. 5mm(+ _ 0. 05mm), Doping: S doped, Conducting type: N type, Orientation: (111)+_30' Edge Orientation: (110)1 Polished: One side polished. Surface finish (RMS or Ra) : < 8A Typical Physical Properties Crystal Structure Cubic. a =5. 4505 ? FONT> Growth Method CZ (LEC) Density 4. 13 g cm3 Melt Point 1480 oC Thermal Expansion 5. 3 x10 6 oC Dopant S doped undoped Crystal growth axis <111> or

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