Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 1SP Resistivity: 0.1-1.0 ohm.cm - GESbe50D05C1R01US DyScO3 Temperature Accuracy

Temperature Accuracy

2       Pic

Power Extension One extension socket (Max power 1500W) is installed in the glove box main chamber

we highly recommend you use a PTFE flange assembly:

Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 1SP Resistivity: 0.1-1.0 ohm.cm - GESbe50D05C1R01US DyScO3 Temperature AccuracyGe Wafer Specification Growing Method: CZ Orientation: (110) + _0. 5 Deg Wafer Size: 2" dia x 500 microns Surface finish (RMS or Ra) : One side optical polished < 30A Doping: Sb doped Conductor type: N type Resistivity: 0. 1 0. 5 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754 A