Al2O3 single crystal substrate, <0001> 100mm Dia. x 0.65mm 1sp - ALC100D065C1 Ball Mills Working temperature: 1750°C (in air)

Working temperature: 1750°C (in air)

9% Size 200mm L x 300mm W x 0

58@ 300K at C axis

The pressing die cannot be used for pressing powder with particle size < 30 micron

Al2O3 single crystal substrate, <0001> 100mm Dia. x 0.65mm 1sp - ALC100D065C1 Ball Mills Working temperature: 1750°C (in air)Features: Sapphire ( single crystal of Al2O3 ) is being used extensively as a substrate for III V nitrides and for many other epitaxial films Normal0MicrosoftInternetExplorer4 Orientation: C plane off 0. 2+ 0. 1o to M plane leftwards from the Primary; 0 + 0. 1o off to A plane Diameter: 100mm+ 0. 1 Thickness: 0. 65mm + 0. 025 Major Flat: A axis[11 20]+ 0. 3o Major Flat Length: 30mm + 1mm Surface Finish: Front side: Epi polished Ra<=0. 3nm(by AFM); Back