Cu Film on Ta/SiO2/Silicon Wafer, Cu=400 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 10x10x0.525mm, 1sp Pouch Cell Warning Never let the press

Warning Never let the press hold the target pressure be longer than 8 minutes

Applications on various materials

You may consider using EQ-BNMR for easy mold release

Back side: fine ground ( Ra:0

Cu Film on Ta/SiO2/Silicon Wafer, Cu=400 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 10x10x0.525mm, 1sp Pouch Cell Warning Never let the pressSpecifications: Cu coated SiO2 Si Wafer ( 10x10 mm size) Thickness of polycrystalline Cu <111> film: 400 nm Thickness of Ta diffusion barrier: 50 nm 10x10x0. 5 mm Si wafer (Prime Grade) P type, B doped, <100> orientation, SSP Resistivities: 1 20 ohm cm thermal oxide: 300 nm Surface Roughness: as grown Package: One 1000 class clean room with 100 class plastic bag 10 pcs per package for minimum order