GaAs Wafer - Growing Method: VGF (100), Zn doped, P-Type, 3"x0.5 mm, 1sp Nano Two types of zero diffraction

Two types of zero diffraction plates are optional from the product option bar

so never press the red or green button in this period

The pressing die is made of high-stretched and highly polished carbon steel to achieve high hardness to meet the essential requirements of making ceramic or metal samples

OD:    81

GaAs Wafer - Growing Method: VGF (100), Zn doped, P-Type, 3"x0.5 mm, 1sp Nano Two types of zero diffractionGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 3" dia x 0. 5mm Polishing: one side polished Doping: Zn doped Conductor type: S C P Carrier Concentration: (5. 01 6. 30) x 10^17 cm^3 Mobility: 184 200cm^2 V. S EPD: <5000 cm^2 resistivity: (5. 14 6. 67)x10^ 2 ohm. cm Ra(Average Roughness) : < 0. 4 nm Note: EPI ready wafers Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces