LaAlO3,(100) orn. 1"x 1" x 0.5mm substrate, 1 side epi polished - LAOa252505S1 Thermal Evaporation

LaAlO3,(100) orn. 1"x 1" x 0.5mm substrate, 1 side epi polished - LAOa252505S1 Thermal EvaporationLaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for the epitaxial growth of high Tc superconductors and magnetic and ferroelectric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications. Substrate Specifications: Wafer Size: 1'' x 1'' x 0. 5 mm thickness + 0. 05 mm, Wafer Orientation: (100) + 0.

Conductivity type                                               P type

An NRTL certified 110-220 VAC to 24 VDC power adapter is included

Winding Speed 0 - 250 RPM Adjustable

Whole set  pressing die includes One 0

Syringe (1 unit)

Overall Length: 85 mm

Net Weight: 320mg/pcs

Excellent for any type of tubing: ceramic

it can grind samples under the vacuum condition or be filled with inert gas

Conductor type:               S-C-P

pressing die set for making a 6 mm diameter sample pellet

One is for cutting 57 mm x 44 mm Cathode electrode sheet and the other one is for cutting 58 mm x 45 mm Anode sheet