GaN (0001) 10x10.5x0.35mm,2sp ,Semi-insulating CeO2 (Epi-film) : 357 mm / 14
$629.62
Description
: 357 mm / 14 inch
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The software (ExtremeTest) is included to set various working modes for measuring capacity and life cycle for all types of rechargeable batteries
ID: 16 mm
GaN (0001) 10x10.5x0.35mm,2sp ,Semi-insulating CeO2 (Epi-film) : 357 mm / 14GaN single crystal substrates is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. The large growth rate enables the growth of self supporting wafer thicknesses in a convenient time period. Specifications of the Substrate Orientation: c axis (0001) + 1. 0 o Nominal Thickness 350+ 25 microns Dimension: 10 mm x 10. 5 mm + 0. 5 mm Bow <5
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