Ge Substrate: (100) 5x5 x 0.5 mm , 1SP, N type Sb doped,R:10-15 Ohm.cm Glass Substrates Temper: H19

Temper:                                     H19

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Epitaxial thin Film Composition <110>  CeO2

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Ge Substrate: (100) 5x5 x 0.5 mm , 1SP, N type Sb doped,R:10-15 Ohm.cm Glass Substrates Temper: H19Ge Wafer Specification Growing Method: CZ Wafer Size: 5x5 x0. 5 mm Surface Polishing: one side epi polished Orientation: (100) Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Sb doped Conductor type: N type Resistivity: 10 15 Ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer