Si wafer (100), 3 "dia x0.35-0.4 mm, 1sp, N type, As-doped, R:0.001-0.008 ohm.cm - SIAsa76D035C1R0001 XRD Size: 30 mm dia

Size:          30 mm dia

445mm(L) x 380mm(D) x 135mm(H)

Click to see the application for gas disposal Option part

Whole set  pressing die includes Double layer structure 120mm dry pressing die

Si wafer (100), 3 "dia x0.35-0.4 mm, 1sp, N type, As-doped, R:0.001-0.008 ohm.cm - SIAsa76D035C1R0001 XRD Size: 30 mm diaSingle crystal Si Conductivity: N type ( As doped) Resistivity: 0. 001 0. 008 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 3" diameter x 0. 35 0. 4 mm Orientation: (100) Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers