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GaAs, Growing Method: VGF(100) Si doped, N-type, 3" dia x 0.625mm, 2sp, Carrier Concentration: (1.4-3.96) x 10^18 /cm^3 - GASia76D0625C2US5 Aluminum Film A vacuum pen for easy
GaAs, Growing Method: VGF(100) Si doped, N-type, 3" dia x 0.625mm, 2sp, Carrier Concentration: (1.4-3.96) x 10^18 /cm^3 - GASia76D0625C2US5 Aluminum Film A vacuum pen for easy
$229.43
Description
A vacuum pen for easy component placement and cell assembly ( click Pic
Polished: two sides
One piece of 12123 aluminum case
How to install Dimension Optional This device is for MTI ultrasonic spray head only
GaAs, Growing Method: VGF(100) Si doped, N-type, 3" dia x 0.625mm, 2sp, Carrier Concentration: (1.4-3.96) x 10^18 /cm^3 - GASia76D0625C2US5 Aluminum Film A vacuum pen for easyGaAs single crystal wafer Growing Method: VGF Orientation: (100)+ 0. 5 degree Size: 3" dia x 0. 625mm Polishing: two sides polished Doping: Si doped Conductor type: S C N Carrier Concentration: (1. 06 3. 96) x 10^18 cm^3 Mobility: 1420 2480 cm^2 V. S Resistivity: (1. 1 2. 38) E 3 ohm. cm EPD: <1000cm^2 Ra(Average Roughness) : < 0. 4 nm EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
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