50 ohm.cm - GEUe50D05C2R50US XRD except for defective as receivedGe Wafer Specification Growing Method: CZ Orientation: (110) + _0. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: both sides optical polished Surface finish (RMS or Ra) : < 30A Doping: Undoped Conductor type: N type Resistivity: > 50Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) EPD: < 5E2 cm^2 Package: under 1000 class clean room Typical Properties:"> 50 ohm.cm - GEUe50D05C2R50US XRD except for defective as received"> 50 ohm.cm - GEUe50D05C2R50US XRD except for defective as receivedGe Wafer Specification Growing Method: CZ Orientation: (110) + _0. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: both sides optical polished Surface finish (RMS or Ra) : < 30A Doping: Undoped Conductor type: N type Resistivity: > 50Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) EPD: < 5E2 cm^2 Package: under 1000 class clean room Typical Properties:"> 50 ohm.cm - GEUe50D05C2R50US XRD except for defective as received"> 50 ohm.cm - GEUe50D05C2R50US XRD except for defective as receivedGe Wafer Specification Growing Method: CZ Orientation: (110) + _0. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: both sides optical polished Surface finish (RMS or Ra) : < 30A Doping: Undoped Conductor type: N type Resistivity: > 50Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) EPD: < 5E2 cm^2 Package: under 1000 class clean room Typical Properties:"> Ge Wafer (110) N-type Undoped, 2" dia x 0.5 mm, 2SP,R:>50 ohm.cm - GEUe50D05C2R50US XRD except for defective as received – salirdelamultipropiedad.es

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Ge Wafer (110) N-type Undoped, 2" dia x 0.5 mm, 2SP,R:>50 ohm.cm - GEUe50D05C2R50US XRD except for defective as received

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50 ohm.cm - GEUe50D05C2R50US XRD except for defective as received">
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except for defective as received

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Ge Wafer (110) N-type Undoped, 2" dia x 0.5 mm, 2SP,R:>50 ohm.cm - GEUe50D05C2R50US XRD except for defective as receivedGe Wafer Specification Growing Method: CZ Orientation: (110) + _0. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: both sides optical polished Surface finish (RMS or Ra) : < 30A Doping: Undoped Conductor type: N type Resistivity: > 50Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) EPD: < 5E2 cm^2 Package: under 1000 class clean room Typical Properties:

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