GaP Wafer, Undoped (111) 10x10x0.5 mm, 2sp Pouch Cell Stand and O-ring material is

Stand and O-ring material is EPDM

Carrier Concentration: (3

It is important to bury the tungsten coil to prevent heat dissipation

Functions and Features

GaP Wafer, Undoped (111) 10x10x0.5 mm, 2sp Pouch Cell Stand and O-ring material isGaP single crystal wafer, Size: 10mm x 10 mm x 0. 5 mm, Doping: undoped, Conducting type: N type, Orientation: (111) Polished: Two sides Surface finish (RMS or Ra) : < 8A Typical Physical Properties Crystal Structure Cubic. a =5. 4505 Growth Method CZ (LEC) Density 4. 13 g cm3 Melt Point 1480 oC Thermal Expansion 5. 3 x10 6 oC Dopant S doped undoped Crystal growth axis <111> or <100> <100> or <111> Conducting Type N N Carrier Concentration 2 ~ 8 x1017