Al2O3- Sapphire Wafer, C-plane (0001), 3" Dia.x0.5mm , 2SP Metallic Substrate A-Z Wafer size: 10 x 10

Wafer size: 10 x 10 x 1 mm thick

Nickel foam was carefully cleaned by concentrated HCl solution (37 wt

mso-tstyle-rowband-size:0

94mm  Flatness =  0

Al2O3- Sapphire Wafer, C-plane (0001), 3" Dia.x0.5mm , 2SP Metallic Substrate A-Z Wafer size: 10 x 10Features: Sapphire (single crystal of Al2O3 ) is being used extensively as a substrate for III V nitrides and for many other epitaxial films Orientation: C axis[0001]( + 0. 3 Deg) with Standard Flat Diameter: 3" + 0. 3mm Thickness: 500um + 25 um Major Flat: A axis[11 20]+ 0. 2o Surface Finish: Front sides: Epi polished Ra<0. 5nm (by AFM) Back side: Epi polished , <0. 5nm(by AFM) TTV: < 10um Polished surface: Two side epi polished by special CMP