US$ 2475.00
GaP Wafer, S doped (111) 2"x0.5 mm, 2sp - GPSc50D05C2 TGA which will help prevent damages
$344.43
Description
which will help prevent damages and prolong the integrity of the material
Three ranges of Max
Y3Sc2Ga3O5
Orientation: (111) +/- 0
GaP Wafer, S doped (111) 2"x0.5 mm, 2sp - GPSc50D05C2 TGA which will help prevent damagesGaP single crystal wafer, Size: 2" diameter(+ _0. 15mm) x 0. 5mm(+ _ 0. 05mm), Doping: S doped, Conducting type: N type, Orientation: (111)+_30' Edge Orientation: (110)1 Polished: Both sides polished. Surface finish (RMS or Ra) : < 8A Typical Physical Properties Crystal Structure Cubic. a =5. 4505 ?3 Growth Method CZ (LEC) Density 4. 13 g cm3 Melt Point 1480 oC Thermal Expansion 5. 3 x10 6 oC Dopant S doped undoped Crystal growth axis <111> or <100>
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