3. 26 Thermal Conductivity (W m. K) >170 Thermal Expansion (x10 6 oC) <4. 2 Dielectric"> 3. 26 Thermal Conductivity (W m. K) >170 Thermal Expansion (x10 6 oC) <4. 2 Dielectric"> 3. 26 Thermal Conductivity (W m. K) >170 Thermal Expansion (x10 6 oC) <4. 2 Dielectric"> Thick Aluminum Nitride Substrate for RTP Furnace's Sample Holder - EQ-AIN-Holder Orientation 10-14 Resistivity: (2 – salirdelamultipropiedad.es

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Thick Aluminum Nitride Substrate for RTP Furnace's Sample Holder - EQ-AIN-Holder Orientation 10-14 Resistivity: (2

$9457.00

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Resistivity:                             (2

EPI polished  on one side or two sides to Ra < 10 Å

MTI's high vacuum pump with KF40 port to 80mm OD tube furnace with KF40 flange

Chemical Formula Na2Mn[Fe(CN)6] Powder Color Light Gery/White

Thick Aluminum Nitride Substrate for RTP Furnace's Sample Holder - EQ-AIN-Holder Orientation 10-14 Resistivity: (2Such unpolished Aluminum Nitride can be placed in the center of holder for holding test samples up to 3" or 5" diam. The excellent temperature uniformity can be achieved in this 3" or 5" diam. area due to the benefit from its high thermal conductivity. Aluminum Nitride Ceramic Substrates Properties Item No. AIN Holder Purity (wt%) 99% (AN5116) Density (g cm3) >3. 26 Thermal Conductivity (W m. K) >170 Thermal Expansion (x10 6 oC) <4. 2 Dielectric

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