Ge Single Crystal Substrate, N-type Sb-doped (100) 10x10x0.45mm 1sp, R<0.009ohm.cm CdTe Doped Zn (CZT)

Ge Single Crystal Substrate, N-type Sb-doped (100) 10x10x0.45mm 1sp, R<0.009ohm.cm CdTe Doped Zn (CZT)Ge Wafer Specification Growing Method: CZ Wafer Size: 10 x 10 x0. 45 mm Surface Polishing: one side epi polished Orientation: (100) Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Sb doped Conductor type: N type Resistivity: <0. 009 Ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other Crystal

Application Notes Please click here to learn  how to use and maintain the Alumina tube in MTI high-temperature tube furnace

Temperature control software kit (for YUDIAN series controllers) + 15" laptop package is available at the options bar

Orientaion: M plane <10-10>orn +/-0

Centrifugal acceleration: 23 g max

<100> orientation

nuclear medicine

For more information on this Al-Clad coin cell case

5V) due to the passivation of cladding by electrolyte component (especially LiPF6 based electrolyte system) to form a layer of AlF3

BST8-A6V0 is an eight-channel battery and supercapacitor analyzer to analyze all kinds of batteries and supercapacitors from 0

Polish:             Fine ground

m 80mm 120m 2~2

8 separated split coin cells can be assembled independently and tested parallelly for high-throughput R&D battery material testing and screening