Surface chemical analysis. Secondary-ion mass spectrometry. Determination of boron atomic concentration in silicon using uniformly doped materials Ingestion-build-54484 fluid resistance

fluid resistance

b) methods based on measurement of stable isotopic ratio

Results of interlaboratory tests

Installers of heating

Surface chemical analysis. Secondary-ion mass spectrometry. Determination of boron atomic concentration in silicon using uniformly doped materials Ingestion-build-54484 fluid resistance1 Scope This International Standard specifies a secondary ion mass spectrometric method for the determination of boron atomic concentration in single crystalline silicon using uniformly doped materials calibrated by a certified reference material implanted with boron. This method is applicable to uniformly doped boron in the concentration range from 1 1016 atoms cm3 to 1 1020 atoms cm3.