LaAlO3, (100) orn. 0.25" x 0.25" x 0.5 mm substrate , 1 side Epi polished High-Throughput Coating Double sides area density: 22

Double sides area density: 22

Note: The single grinding time is recommended not to exceed 300s

Tube Furnace - EQ-FL-80KF25-HG

Click to learn: What is Cold Isostatic Pressing (CIP)

LaAlO3, (100) orn. 0.25" x 0.25" x 0.5 mm substrate , 1 side Epi polished High-Throughput Coating Double sides area density: 22Substrate Specifications: Wafer Size: 0. 25'' x 0. 25'' x 0. 5 mm thickness + 0. 05 mm, Wafer Orientation: (100) + 0. 5 Deg Polishing: One side CMP polished with free sub surface damage. Surface finish (RMS or Ra) : < 10A Package: Under 1000 class clean room, and in a 100 grade plastic bag in a wafer container. Lattice Constant a=3. 792 Pseudocubic = Warning: LaAlO3 crystal has a visible twin on a polished surface, which is of normal nature., please