45 ohm-cm Applicators 2mm Optional Please click theGe Wafer Specification Growing Method: CZ Orientation: (211) + _0. 5 Deg. Wafer Size: 2" dia x 450 microns Surface Polishing: one side epi polished Surface roughness: < 8 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: > 45 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5."> 45 ohm-cm Applicators 2mm Optional Please click the"> 45 ohm-cm Applicators 2mm Optional Please click theGe Wafer Specification Growing Method: CZ Orientation: (211) + _0. 5 Deg. Wafer Size: 2" dia x 450 microns Surface Polishing: one side epi polished Surface roughness: < 8 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: > 45 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5."> 45 ohm-cm Applicators 2mm Optional Please click the"> 45 ohm-cm Applicators 2mm Optional Please click theGe Wafer Specification Growing Method: CZ Orientation: (211) + _0. 5 Deg. Wafer Size: 2" dia x 450 microns Surface Polishing: one side epi polished Surface roughness: < 8 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: > 45 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5."> Ge Wafer (211) N-type Undoped, 2" dia x 0.45 mm, 1SP, resistivities: >45 ohm-cm Applicators 2mm Optional Please click the – salirdelamultipropiedad.es

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Ge Wafer (211) N-type Undoped, 2" dia x 0.45 mm, 1SP, resistivities: >45 ohm-cm Applicators 2mm Optional Please click the

$126.47

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45 ohm-cm Applicators 2mm Optional Please click the">
Description

2mm Optional  Please click the picture below to order Al spacer and spring Application Excellent for developing new Li-ion rechargeable batteries up to 5

Here are the tips: Long press to increase the value

Aside from greater measurement precision

Capacity 158 mAh / g

Ge Wafer (211) N-type Undoped, 2" dia x 0.45 mm, 1SP, resistivities: >45 ohm-cm Applicators 2mm Optional Please click theGe Wafer Specification Growing Method: CZ Orientation: (211) + _0. 5 Deg. Wafer Size: 2" dia x 450 microns Surface Polishing: one side epi polished Surface roughness: < 8 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: > 45 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5.

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