Ge Substrate (110)+/- 0.7 degree 10x10x 0.5 mm, 1 SP, Sb-doped ,R:0.1-0.5 ohm.cm Max. number of Channel 8 Pumping of condensing vapors

Pumping of condensing vapors

Mohn hardness

The case and spring shown in the picture are not included

biotechnology and AFM applications and is also suitable of an opaque microscopy support

Ge Substrate (110)+/- 0.7 degree 10x10x 0.5 mm, 1 SP, Sb-doped ,R:0.1-0.5 ohm.cm Max. number of Channel 8 Pumping of condensing vaporsSpecifications Growing Method: CZ Wafer Size: 10x10x0. 5 mm Surface Polishing: one side optical polished Orientation: (110) + 0. 7 degree Surface finish (RMS or Ra) : < 30A Doping: Sb doped Conductor type: N type Resistivity: 0. 1 0. 5 Ohms cm EPD: N A Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater