Thermal Oxide Wafer: 100 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm , N type , P doped, 1SP R: 0.1-1.0ohm.cm - Fm100SOonSIPa100D0525C1R01US Ti 1 set SYU-Generator (optioanl) Ultrasonic

1 set SYU-Generator (optioanl) Ultrasonic generator box 1 set

the actual pressure on your working piece is:

Surface roughness :N/A

Resistivity:                      (2

Thermal Oxide Wafer: 100 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm , N type , P doped, 1SP R: 0.1-1.0ohm.cm - Fm100SOonSIPa100D0525C1R01US Ti 1 set SYU-Generator (optioanl) UltrasonicThermal oxide Layer Research Grade , about 80 % useful area SiO2 layer on 4'' Silicon wafer Oxide layer thickness: 100 nm ( 1000A) + 10% for each side ( coatd on both sides ) Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: N type P dped Resistivity: 0. 1 1. 0 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" + 0. 5 mm x 0. 525 mm