US$ 20.60
InSb (100) 2" dia x 0.45 mm, Te doped, N type, 1 side polished - ISTea50D045C1US Sc Specifications Dimensions (Dia x Height)
$931.50
Description
Specifications Dimensions (Dia x Height) Case: 16
Dimension:20mm x 20mm x 3
Cutting Blade
Used for DHG-9070 serious Gravity Convection Oven
InSb (100) 2" dia x 0.45 mm, Te doped, N type, 1 side polished - ISTea50D045C1US Sc Specifications Dimensions (Dia x Height)2" InSb wafer (N type, Te Doped ) Size: 2" dia x 0. 45 (+ 0. 025 ) mm thick Orientation: <100> + 0. 5 o Polishing: one side polishd Packing: Sealed in nitrogen in single wafer container at 100 class clean room Properties Growth method LEC Orientation (100) + 0. 5 o Orientation Flat Two reference flates at <100> Doping Te Conductivity type N type Carrier Concentration (@77 K) (0. 19 0. 50)E18 cc @77K Resistivities (ohm cm): 0. 0005 0. 001 Mobility
Shipping Notes
- Free Standard Shipping on $100+ Orders to the USA.
- Except Preorder products are shipped in 48 hours.
- Delivery to the USA:
- Standard Shipping : 3-10 business days
- If time is of the essence, please consider selecting expedited delivery for faster service.
You may also like
US$ 10.78
US$ 660.00
US$ 34.80
US$ 27.00
US$ 11.00