InSb (100) 10x10x 0.45 mm, P type, Ge doped, two side polished Orientation 0001 Please use alcohol to clean

Please use alcohol to clean the pressing die every time before use and store it in a dry place with antirust oil after operation to avoid rusting on the surface

1  ohm-cm

Granularity (um)

EPI Film :

InSb (100) 10x10x 0.45 mm, P type, Ge doped, two side polished Orientation 0001 Please use alcohol to clean10x10x0. 45 mm InSb wafer (P type, Ge doped) Size: 10x10x0. 45 mm Orientation <100> + 0. 5o with two reference flats Polishing: two sides polishd Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room Properties Properties Growth method LEC Orientation (100) + 0. 5 o Orientation Flat N A Doping Ge Conductivity type P Type Carrier Concentration 1. 35x10^15 cc @77K Mobility 6300 cm2 Vs EPD <=200 cm 2 Resistivity: 7. 34E 1