Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 2SP Resistivity: 1-5 ohm.cm Applicators

Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 2SP Resistivity: 1-5 ohm.cm ApplicatorsGe Wafer Specification Growing Method: CZ Orientation: (110) + _0. 5 Deg Wafer Size: 2" dia x 500 microns Surface finish (RMS or Ra) : Two sides optical polished < 30A Doping: Sb doped Conductor type: N type Resistivity: 1 5 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754 A Density:

Orientation:                           (110) +/_0

67mm  Height    =  3

Laptop Computer

Thin Film from A-Z

3/8" OD larger diameter Alumina tube with 390 mm Length central block zone is designed for MTI Rotary Tube Furnace OTF-1500X-II-R60

Mobility: 3710-6230cm^2/V

Material: Aluminum Alloy

Mobility:                       140 cm^2/Vs

)):    109 - 1011

Ag (silver) Coated Nickel Foam as three-dimensional conductive electrode substrates  (100 mm length x 100mm width x 1

EPD:                             N/A

Dimensions Case: 46mm(OD) x 45