Graphene film on Ni/SiO2/Si 100mm dia, High Purity Chemical A-Z

Graphene film on Ni/SiO2/Si 100mm dia, High Purity Chemical A-ZGraphene films are grown directly on a Ni SiO2 Si deposited on an oxidized silicon wafer usinga CVD process. Specifications: Research Grade , about 90 % useful area Wafer Size: 100 mm diameter Growth Method: Chemical Vapor Deposition (CVD) Technique Film thickness: 1 10 monolayer thick Graphene film is multilayer with thickness varying in the range 1 10 layers; Graphene layers are aligned relative to each (graphite like A B stacking ) other as

5mm(D) x 5mm(H)

Part Number EQ-DW0125x65

Resistivity:            N/A

2mm Tab will be provided in the package for customer's practice) Working Space Max

Orientation:   (0001) +/- 1

5mm Belt height 4mm Tooth depth 3mm

with no differences other than color

Use the largest chuck

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Lid: 4mm H

Hardness:                   9 ( mohs)

Polish: both sides EPI polished