VGF InP (100) undoped, 2" x 0.35 mm wafer, 2sp - IPUa50D035C2US Boron-Nitride on Silicon Size for one piece
$290.20
Description
Size for one piece
Other Sapphire
Color of Cover/ Background: Transparent/Transparent
Carrier concentration: (5
VGF InP (100) undoped, 2" x 0.35 mm wafer, 2sp - IPUa50D035C2US Boron-Nitride on Silicon Size for one pieceInP single crystal wafer Orientation: (100) Size: 2" diameter x 0. 35 mm Doping: Un doped Conducting type: S C Polish: Two sides polished Resistivity: (2. 48 3. 34)10^ 1 ohm. cm Mobility: 4250 4340cm^2 V. S EPD: <5000 cm^2 Carrier Concerntration: (4. 34 5. 91) ^15 cmE 3
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