+ 0. 5o with two reference flats Polishing: one side polished ( back side etched ) Packing: Sealed under nitrogen with single wafer container in 1000 class clean room Properties Growth method LEC Orientation (111)A + 0. 5o Orientation Flat Doping Undoped Conductivity type N type Carrier Concentration <1E14 @77K Mobility >2E5 cm^2 V. s EPD <500 cm^ 2"> + 0. 5o with two reference flats Polishing: one side polished ( back side etched ) Packing: Sealed under nitrogen with single wafer container in 1000 class clean room Properties Growth method LEC Orientation (111)A + 0. 5o Orientation Flat Doping Undoped Conductivity type N type Carrier Concentration <1E14 @77K Mobility >2E5 cm^2 V. s EPD <500 cm^ 2"> + 0. 5o with two reference flats Polishing: one side polished ( back side etched ) Packing: Sealed under nitrogen with single wafer container in 1000 class clean room Properties Growth method LEC Orientation (111)A + 0. 5o Orientation Flat Doping Undoped Conductivity type N type Carrier Concentration <1E14 @77K Mobility >2E5 cm^2 V. s EPD <500 cm^ 2"> InSb (111)A 49mm dia x 0.5 mm, Undoped, N type, one side polished Orientation -201 A copy of MS Excel – salirdelamultipropiedad.es

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InSb (111)A 49mm dia x 0.5 mm, Undoped, N type, one side polished Orientation -201 A copy of MS Excel

$966.00

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Description

A copy of MS Excel must be installed in order to export data

Nickel Foam for Battery Cathode Substrate  (300mm length x 80mm width x 0

45)x10^17/cm^3

Light yield [photons/MeVy]

InSb (111)A 49mm dia x 0.5 mm, Undoped, N type, one side polished Orientation -201 A copy of MS Excel2" InSb wafer (N type, undoped) Size: 49 mm dia x 0. 5mm thick Orientation <111> + 0. 5o with two reference flats Polishing: one side polished ( back side etched ) Packing: Sealed under nitrogen with single wafer container in 1000 class clean room Properties Growth method LEC Orientation (111)A + 0. 5o Orientation Flat Doping Undoped Conductivity type N type Carrier Concentration <1E14 @77K Mobility >2E5 cm^2 V. s EPD <500 cm^ 2

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