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Si (111) 10x10x0.5mm, 1SP, N type undoped, R >1000 ohm-cm - SiUc101005S1R1000 CdTe & CdZnTe/CZT EPD: < 5000/cm^2

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EPD:                                < 5000/cm^2

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Si (111) 10x10x0.5mm, 1SP, N type undoped, R >1000 ohm-cm - SiUc101005S1R1000 CdTe & CdZnTe/CZT EPD: < 5000/cm^2Specifications: Single crystal: Si Conductive type: N type, undoped Resistivity: > 1,000 ohm cm Size: 10 x 10 x 0. 5mm Orientation: (111) Polish: one side polished Surface roughness: < 5A Related Products Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater

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