Si3N4 Silicon Nitride Ceramic Substrate, 10 x 10 x 1.0 mm, One Side Polished - CmSi3N4101010S1 Al2O3 Vacuum Level 10E-5 torr by

Vacuum Level 10E-5 torr by molecular pump and 10E-2 torr by mechanical pump

Click here to see JCPDS data of DyScO3 (X-ray diffraction index data from powder XRD

Specific Capacity: 180 mAh/g

SiO2(single crystal quartz)

Si3N4 Silicon Nitride Ceramic Substrate, 10 x 10 x 1.0 mm, One Side Polished - CmSi3N4101010S1 Al2O3 Vacuum Level 10E-5 torr bySi3N4 ceramic substrate is made by hot press Purity: > 99. 95% Density: > 99. 5% Size: 10 mm x 10 mm x 1 mm thickness Orientation: N A Polycrystalline Surface fitness: One side polished Surface roughness: < 30A Please click here to review typical Si3N4 physical properties Related Ceramic Substrate Aluminum Nitride Substrates: AlN Carbon Substrate & Foam ITO Coated Glass Plastic Silicon Nitride ( Si3N4) Substrate Aluminum Oxide Substrates Al2O3 Corning