SiC - 4H (0001), 5x5x0.3 mm , one side polished BaF2 0mm Electrical Insulating Good Hot

0mm Electrical Insulating Good Hot Sealing Condition 180-190°C Moisture Vapor / O2 Transmission Rate 200ppm / 5 years  Solvent Retention Less than 5mg/m2 Appearance Within the sample of the limit Slip Factor

Suggested Sealing Method (parameter below may vary from case to case):

LSAT LaAlO3  MgO Plasma Cleaner  NdCaAlO4 NdGaO3  SrTiO3 Wafer Box SrLaAlO4  Other GGG YSZ Film Coater

Cutting Blade Come with 5 pcs of the impregnated diamond blade of 4" Dia × 0

SiC - 4H (0001), 5x5x0.3 mm , one side polished BaF2 0mm Electrical Insulating Good HotSpecifications of Substrate Orientation: <0001> + 0. 5 Dimension: 5x5 x 0. 3 + 0. 03 mm Polished: One sides epi polished on Si face Surface Roughness: < 10 A by AFM Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 07 A c = 10. 05 A Stacking sequence: ABCB (4H) Growth Technique: MOCVD Polishing : Silicon face polished Band Gap: 3. 26 eV ( Indirect) Conductivity type: N TTV Bow Warp: <=35um