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Mo Polycrystalline Substrate: 1"x1" x 0.5 mm, two sides polished - McMo252505S2Poly Orientation 111A wafer InGaAs EPI on InP

$121.69

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Description

wafer InGaAs EPI on InP (Semi-insulating)(100) by MOCVD deposition

which is consumable

Handle on both sides for easy carry

An optional tube rack for 15ml x 16 centrifuge tubes is available at extra cost

Mo Polycrystalline Substrate: 1"x1" x 0.5 mm, two sides polished - McMo252505S2Poly Orientation 111A wafer InGaAs EPI on InPPolycrystallline Mo substrate Purity: 99. 9% Average Grain Size: 10~50 Microns ( No annealing ) Substrate dimension: 1"x1" x 0. 5 mm Polishing: two sides polished Related Product Metallic Substrate A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater

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