Ge Wafer (110) Ga-doped, 2" dia x 0.5 mm, 1SP Resistivity : 1-10 ohm-cm Orientation 100

Ge Wafer (110) Ga-doped, 2" dia x 0.5 mm, 1SP Resistivity : 1-10 ohm-cm Orientation 100Ge Wafer Specification Growing Method: CZ Orientation: (110) + _0. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: one side optical polished Surface finish (RMS or Ra) : < 30A Doping: Ga doped Conductor type: P type Resistivity: 1 10 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a

AC 110V Single Phase or AC 220V Single Phase can be selected in the option bar

and faster speed

Surface Roughness :   <15A

18 and 20 mm (ID)

CE certificated only

Polished:                Two sides polished

This unique product was suggested by Prof

RT- 200°C:  Max

3) Water Chiller: UL61010 & UL1995

Motor speed: 10 - 70 rpm programmable

Size:                           5mm x 5mm

( at 0 deg