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Ge Single Crystal wafer, N-type undoped (111) 4"x0.5 mm,1sp.R:50 ohm.cm Orientation A-plane(11-20) - 3 seconds heating time
Ge Single Crystal wafer, N-type undoped (111) 4"x0.5 mm,1sp.R:50 ohm.cm Orientation A-plane(11-20) - 3 seconds heating time
$390.43
Description
- 3 seconds heating time
Related Products
To build a DIY electrospinning system
004mm) (Melting Point: ~130ºC) Thickness: 115
Ge Single Crystal wafer, N-type undoped (111) 4"x0.5 mm,1sp.R:50 ohm.cm Orientation A-plane(11-20) - 3 seconds heating timeGe Wafer Specification Growing Method: CZ Orientation: (111) + 0. 5 Deg. Wafer Size: 4" dia x 500 microns Surface Polishing: One side epi polished Surface roughness: < 30 A ( by AFM) Doping: Un Doped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5.
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