NaCl (111) +/-3 degree 10x10x2.0 mm, 1SP GaN Specification Normal 0 7
$134.62
Description
Specification Normal 0 7
Size: 100mm dia x 0
Since August 1
-GaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE)-based method
NaCl (111) +/-3 degree 10x10x2.0 mm, 1SP GaN Specification Normal 0 7Specifications: Crystal: NaCl Orientation: (111) + 3 o Size: 10 x 10 x 2. 0 mm Polish: one side polished Purity: 99. 9% Surface finish: < 100A (RMS or Ra) Package: 1000 class clean plastic bag Note: NaCl crystal is sensitive to moisture and water, must be stored in desiccator box Related Products Other Crystal Wafer A Z Plasma Cleaner Wafer Containers Dicing Saw Film Coater
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 +/-3 degree 10x10x2.0 mm, 1SP GaN Specification Normal 0 7){kind=link}
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