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GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 3"D x0.5 mm, 1SP CdTe Doped Zn (CZT) Specifications: (RoHS Compliant
GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 3"D x0.5 mm, 1SP CdTe Doped Zn (CZT) Specifications: (RoHS Compliant
$206.43
Description
Specifications: (RoHS Compliant
Crystal Substrate A-Z
One battery testing control unit could connect up to 10 battery-and-supercapacitor analyzers
5 mm +/- 0
GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 3"D x0.5 mm, 1SP CdTe Doped Zn (CZT) Specifications: (RoHS CompliantGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 3" dia x 0. 5mm Polishing: one side polished Doping: undoped Conductor type: Semi Insulating Resistivity: (1. 35 4. 21)x10^8Ohm. cm Mobility: 4360 5640cm^2 V. S EPD: <5000cm^ 2 Primary Flat: EJ(0 1 1) Secondary Flat: EJ(0 11) Ra(Average Roughness) : < 0. 4 nm Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
Shipping Notes
- Free Standard Shipping on $100+ Orders to the USA.
- Except Preorder products are shipped in 48 hours.
- Delivery to the USA:
- Standard Shipping : 3-10 business days
- If time is of the essence, please consider selecting expedited delivery for faster service.
 undoped Semi-Insulated 3){kind=link}
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