+ 0. 5 o Type dopant: N type Undoped Surface Polishing : In(A) face polished chemical ,final face Sb(B) face polished Linde A0. 3um ( mirror finish) Mobility: > 3. 9E4 cm^2 V. S EPD: < 200 Carrier Concentration: (2 7)E14 cm 3@77K Growth Method: LEC Packing: Sealed in nitrogen in single wafer container at 100 class clean room"> + 0. 5 o Type dopant: N type Undoped Surface Polishing : In(A) face polished chemical ,final face Sb(B) face polished Linde A0. 3um ( mirror finish) Mobility: > 3. 9E4 cm^2 V. S EPD: < 200 Carrier Concentration: (2 7)E14 cm 3@77K Growth Method: LEC Packing: Sealed in nitrogen in single wafer container at 100 class clean room"> + 0. 5 o Type dopant: N type Undoped Surface Polishing : In(A) face polished chemical ,final face Sb(B) face polished Linde A0. 3um ( mirror finish) Mobility: > 3. 9E4 cm^2 V. S EPD: < 200 Carrier Concentration: (2 7)E14 cm 3@77K Growth Method: LEC Packing: Sealed in nitrogen in single wafer container at 100 class clean room"> InSb (100) 2" dia x 0.5 mm, N type Undoped, 2 sides polished Additive Polish: two sides EPI polished – salirdelamultipropiedad.es

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InSb (100) 2" dia x 0.5 mm, N type Undoped, 2 sides polished Additive Polish: two sides EPI polished

$948.75

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Polish:             two sides EPI polished with surface roughness  Ra< 5 A

Can be used for MTI as well as Buhler

Growing Method:             CZ

Suitable for any brand polisher

InSb (100) 2" dia x 0.5 mm, N type Undoped, 2 sides polished Additive Polish: two sides EPI polished2" InSb wafer (N type, Undoped ) Size: 2" dia x 0. 5 (+ 0. 025 ) mm thick Orientation: <100> + 0. 5 o Type dopant: N type Undoped Surface Polishing : In(A) face polished chemical ,final face Sb(B) face polished Linde A0. 3um ( mirror finish) Mobility: > 3. 9E4 cm^2 V. S EPD: < 200 Carrier Concentration: (2 7)E14 cm 3@77K Growth Method: LEC Packing: Sealed in nitrogen in single wafer container at 100 class clean room

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