GaAs, VGF Grown (110) ori. N type, Si-doped, 10x10x0.3mm, 2sp Thin-Film/Flexible Battery

GaAs, VGF Grown (110) ori. N type, Si-doped, 10x10x0.3mm, 2sp Thin-Film/Flexible BatteryGaAs single crystal wafer Growing Method: VGF Orientation: (110) Size: 10 x 10 x 0. 3 0. 35 mm Polishing: Two sides polished Doping: Si doped Conductor type: S C N Carrier Concentration:(2. 49 3. 27)x10^18 c. c Mobility: 1630 1870cm^2 V. S Resistivity :( 1. 17 1. 4)x10^ 3 ohm. cm Ra(Average Roughness) : < 0. 4 nm Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces

Tensile Strength:          Lengthwise

and Lock clamps

4 @ 300K  at A axis

Coating thickness: ~143 um

Application Notes Choose the quartz crystal with the right electrode material for your application - gold

The scales are brushed aluminum

< 5 o   +/- 1o

Mobility:                       140 cm^2/Vs

Click the video below to see how to heat sealing the tab onto pouch cell case after the welding:

Doping:                           Ga doped

Surface Density: 180±15g/m²

Cathode Tab: 30mm x 8mm