GaN -Single Crystal Substrate,N-type, (0001), 10x10.5x0.35 mm , 1SP Al2O3 It can adapt various grinding

It can adapt various grinding jars from 1

Polishing:                     single side polished

Optional The 4" sintered diamond blade is the replacement for SYJ-150 Low Speed Cutting Saw

You may consider ordering a quick connecting flange at extra cost

GaN -Single Crystal Substrate,N-type, (0001), 10x10.5x0.35 mm , 1SP Al2O3 It can adapt various grindingGaN single crystal substrates is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. The large growth rate enables the growth of self supporting wafer thicknesses in a convenient time period. Specifications of Substrate Orientation: c axis (0001) + 1. 0 o Type: N type(undoped) Nominal Thickness 350+ 25 microns Dimension: 10 mm x 10. 5 mm