Al2O3- Sapphire Wafer, R Plane, 10x10x1.0mm, 1SP - ALR101010S1 Coated Electrode Edge: Hand seamed

Edge: Hand seamed

6mA-3000mA) by using a normal Ethernet cable connector via one computer

It proves inert  for carbon and refractory metals in many severe situations

04    (80 +/- 1 mm) Length 39

Al2O3- Sapphire Wafer, R Plane, 10x10x1.0mm, 1SP - ALR101010S1 Coated Electrode Edge: Hand seamedFeatures: Sapphire substrate is the popular substrates for III V nitrides, superconductor and magnetic epi film due to less mis matched lattice and stable chemical and physical properties Wafer size: 10 mm x 10 mm x 1. 0 mm thick Orientation tolerance: <1 102> + 0. 5 o Polished surface: substrate surface is EPI polished via a special CMP procedure with RA < 5 A 1 side polished Package: Each wafer is packed in 1000 class clean room with 100 grade